PBSS302ND,115 datasheet

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Маркировка

PBSS302ND,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBSS302ND,115 Collector- Emitter Voltage Vceo Max: 40 V Configuration: Single Quad Collector Continuous Collector Current: 4 A Current - Collector (ic) (max): 4A Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 50 Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2A, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 150MHz ID_COMPONENTS: 1949582 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 4 A Maximum Operating Frequency: 150 MHz (Typ) Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 1.1W Power Dissipation: 2500 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 450mV @ 600mA, 6A Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 15 A Gain Bandwidth Product fT: 150 MHz DC Collector/Base Gain hfe Min: 50 DC Current Gain hFE Max: 300 at 0.5 A at 2 V Maximum Power Dissipation: 360 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS302ND T/R Other Names: 568-4151-2, 934059129115, PBSS302ND T/R
Количество страниц

14 шт.
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Размер файла

133,92 KB